C2335 High Speed NPN Transistor

NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING

The 2SC2335 is a mold power transistor developed for high-speed high-voltage switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES • Low collector saturation voltage: VCE(sat) = 1.0 V MAX. @IC = 3.0 A • Fast switching speed: tf = 1.0 μs MAX. @IC = 3.0 A • Wide base reverse-bias SOA: VCEX(SUS)1 = 450 V MIN. @IC = 3.0 A ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 7.0 V Collector current (DC) IC(DC) 7.0 A Collector current (pulse) IC(pulse) PW ≤ 300 μs, duty cycle ≤ 10% 15 A Base current (DC) IB(DC) 3.5 A Total power dissipation PT TC = 25°C 40 W TA = 25°C 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C

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