Description
This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
Type Power MOSFET Number of Elements 1 Polarity N Channel Mode Enhancement Drain-Source On-Res 1.4Ohm Drain-Source On-Volt 900V Gate-Source Voltage (Max) ±30V Continuous Drain Current 9A Power Dissipation 150W Operating Temp Range -55C to 150C Operating Temperature Classification Military Mounting Through Hole Pin Count 3 +Tab Package Type TO-3PN Packaging Tape and Reel Package Include:1xK2611
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